What it is An insulated-gate bipolar transistor (IGBT) for power switching in medium to high power applications. Benefits - High efficiency with low conduction losses and fast switching. - High voltage and current handling in a compact package. - Easy gate-drive requirements compared with BJT or MOSFET alternatives. - Reliable operation with good dv/dt immunity and fast turn-off. Attributes - Function: enables switching and amplification in converters, inverters, motor drives, and power supplies. - Compatibility: designed to integrate with standard gate-drive circuits and common control schemes in power electronics. - Size: available in standard IGBT packages; multiple form factors to fit space-constrained designs. - Material: silicon-based device with insulated-gate oxide. - Performance: fast switching, low switching losses, high reliability under typical operating conditions. Use scenarios - Industrial motor drive systems for pumps, fans, conveyors. - Solar or wind power inverters for grid-tied or off-grid applications. - Uninterruptible power supplies (UPS) and DC-AC power conversion in data centers.